Antimony sources for MOCVD. The use of Et4Sb2 as a p-type dopant for Hg1−xCdxTe and crystal structure of the adduct [Et4Sb2 · 2CdI2]n Pages 131-139 Ron S. Dickson, Kerryn D. Heazle, Geoff N. Pain, Glen B. Deacon, Bruce O. West, Gary D. Fallon, Robert S. Rowe, Patrick W. Leech, Marcella Faith
|